- 156 - bav16w / 1N4148W surface mount fast switching diode voltage range 75 volts 400m watts power dissipation features fast switching speed surface mount package ideally suited for automatic insertion for general purpose switching applications high conductance mechanical data case: sod-123, molded plastic terminals: solderable per miil-std-202, method 208 polarity: cathode band marking: date code and t ype code or date code only type code: t6, t4 weight: 0.01 gram (approx. ) sod-123 dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. maximum ratings type number symbol value units non-repetitive peak reverse voltage vrm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage vrrm vrwm vr 75 v rms reverse voltage vr(rms) 53 v forward continuous current (note 1) ifm 300 ma average rectifier output current (note 1) io 150 ma non-repetitive peak forward surge current @ t=1.0us @ t=1.0s ifsm 2.0 1.0 a power dissipation (note 1) pd 400 mw thermal resistance junction to ambient air (note 1) r ja 315 k/w operating and storage temperature range t j , t stg -65 to + 150 o c electrical characteristics type number symbol min max units forward voltage if=1.0ma if= 10ma if = 50ma if=150ma vf - 0.715 0.855 1.0 1.25 v peak reverse current vr=75v vr=75v, tj=150 vr=25v, tj=150 vr=20v ir - 1.0 50 30 25 ua na junction capacitance vr=0, f=1.0mhz cj - 2.0 pf reverse recovery time (note 2) trr - 4.0 ns notes: 1. valid provided that terminals are kept at ambient temperature. 2. reverse recovery test conditions: if=ir=10ma, irr=0.1 x ir, rl=100 0.053(1.35) max. 0.006(0.15) typ. min. 0.010(0.25) min. 0.004(0.10) max. 0.067(1.70) 0.55(1.40) 0.022(0.55) typ. min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55)
ratings and characteristic curves (bav16w / 1N4148W) fig.1- forward characteristics fig.2- leakage current vs junction temperature i , instantaneous for ward current (ma) f v , instantaneous forward voltage (v) f i , leakage current (na) r t , junction temperature ( c) j o fig.3- admissible power dissipation vs ambient temperature 0 0 0 0 0 ta m b mw pd 100 200 c o 50 100 200 300 400 500 v =20v r 100 200 10 100 1000 10,000 0.01 12 0.1 1.0 10 100 1000 - 157 -
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